Micron (MU) Lays Out Global Fab Expansion Roadmap Through 2030 to Meet AI-Driven Memory Demand

Micron Technology (MU) is orchestrating a multi-continent expansion of its manufacturing footprint extending to 2030 to capitalize on surging AI-driven memory demand. The plan spans DRAM, HBM, and NAND production, with most new capacity ramp-ups expected from 2027 onward. The strategy follows a 19% stock surge on May 26, 2026, pushing its market capitalization toward $1 trillion. Management flagged that constrained memory supply will persist beyond 2026. Key projects include an advanced Idaho fab with an accelerated mid-2027 output timeline, and a New York site breaking ground in January for a 2030 launch. In Japan, local reports detail a roughly $9.6 billion investment in a Hiroshima facility targeting HBM shipments around 2028. Further capacity is being built in Singapore, where a new NAND fab is slated for the second half of 2028, and Taiwan, where an acquired fab and a new twin facility will scale DRAM output. The company has also activated new advanced packaging operations in India and Malaysia to secure its back-end supply chain.